Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337921
Reference19 articles.
1. Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy
2. TEM study of InAs self-assembled quantum dots in GaAs
3. Transmission-electron microscopy study of the shape of buriedInxGa1−xAs/GaAsquantum dots
4. Modification of InAs quantum dot structure by the growth of the capping layer
5. Transmission electron microscopy study ofInxGa1−xAsquantum dots on a GaAs(001) substrate
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