Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status-Reference-Cited by-同舟云学术

Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status

Published:1999-01-01 Issue:6 Volume:14 Page:575-581
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhukov A E,Ustinov V M,Kovsh A R,Egorov A Yu,Maleev N A,Ledentsov N N,Tsatsul'nikov A F,Maximov M V,Musikhin Yu G,Bert N A,Kop'ev P S,Bimberg D,Alferov Zh I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

2. Low threshold, large To injection laser emission from (InGa)As quantum dots

3. Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser

4. Vertical cavity lasers based on vertically coupled quantum dots

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers;Semiconductors;2023-12

2. The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure;Optical Materials;2021-04

3. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells;Journal of Applied Physics;2017-06-07

4. Microdisk Injection Lasers for the 1.27-μm Spectral Range;Semiconductors;2016-03

5. InP Based Quantum Dots for Long Wavelength Emissions and Their Post-Growth Bandgap Tuning;J NANOELECTRON OPTOE;2015