Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells-Reference-Cited by-同舟云学术

Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells

Published:2017-06-07 Issue:21 Volume:121 Page:214304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Debnath Mukul C.¹^ORCID,Liang Baolai¹,Laghumavarapu Ramesh B.¹,Wang Guodong¹^ORCID,Das Aparna¹,Juang Bor-Chau¹,Huffaker Diana L.¹

Affiliation:

1. California NanoSystems Institute and Department of Electrical Engineering, University of California-Los Angeles, Los Angeles, California 90095, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984832

Reference43 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

4. Nanostructured Absorbers for Multiple Transition Solar Cells

5. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

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