Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties-Reference-Cited by-同舟云学术

Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

Published:2003-05-26 Issue:21 Volume:82 Page:3632-3634
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Passaseo A.,De Vittorio M.,Todaro M. T.,Tarantini I.,De Giorgi M.,Cingolani R.,Taurino A.,Catalano M.,Fiore A.,Markus A.,Chen J. X.,Paranthoen C.,Oesterle U.,Ilegems M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1578182

Reference16 articles.

1. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers

2. High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

3. High-performance InAs quantum-dot lasers near 1.3 μm

4. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

5. Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition

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