Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method-Reference-Cited by-同舟云学术

Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method

Published:2022-07 Issue: Volume:590 Page:126676
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kamata Isaho,Hoshino Norihiro,Betsuyaku Kiyoshi,Kanda Takahiro,Tsuchida Hidekazu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

3. Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

4. Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals

5. The mechanism of micropipe nucleation at inclusions in silicon carbide

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