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Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

  • Published:2006-01 Issue:1 Volume:286 Page:55-60
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Ohtani Noboru,Katsuno Masakazu,Tsuge Hiroshi,Fujimoto Tatsuo,Nakabayashi Masashi,Yashiro Hirokatsu,Sawamura Mitsuru,Aigo Takashi,Hoshino Taizo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. The etching behaviour of dislocations in N-doped 4H-SiC substrate;Journal of Crystal Growth;2023-09

3. The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers;Crystals;2023-06-10

4. Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage;Crystal Growth & Design;2023-06-05

5. Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
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