Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth-Reference-Cited by-同舟云学术

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Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Hu Guojie¹,Zhong Guanglei¹,Yang Xianglong¹,Chen Xiufang¹,Xie Xuejian¹,Yu Guojian²,Hu Xiaobo¹,Xu Xiangang¹

Affiliation:

1. Shandong University,State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors,Jinan,People’s Republic of China,250100

2. Guangzhou Summit Crystal Semiconductor Co., Ltd,Guangzhou,People’s Republic of China,511458

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070954.pdf?arnumber=10070954

Reference12 articles.

1. Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature

2. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

3. The mechanism of micropipe nucleation at inclusions in silicon carbide

4. Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC

5. Defect engineering in SiC technology for high-voltage power devices

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