The mechanism of micropipe nucleation at inclusions in silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124512
Reference15 articles.
1. Performance limiting micropipe defects in silicon carbide wafers
2. Progress in silicon carbide semiconductor electronics technology
3. Quantitative analysis of screw dislocations in 6H−SiC single crystals
4. Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport
5. An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface
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