Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
2. The Science of Crystallization;Tiller,1990
3. Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces
4. Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
5. Liquid phase epitaxial growth of SiC
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