Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365048
Reference21 articles.
1. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
2. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
3. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
4. The effects of low-angle off-axis substrate orientation on MOSFET performance and reliability
5. Scanning tunnelling microscopy on the 6H SiC(0001) surface
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2. Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis;Journal of Applied Physics;2024-03-01
3. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface;Japanese Journal of Applied Physics;2024-01-30
4. Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface;Journal of Vacuum Science & Technology A;2024-01-30
5. Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching;Applied Physics Letters;2023-07-17
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