Abstract
Abstract
A computational model to simulate the electron scattering by step-terrace structures is proposed. Using the proposed model, the transmission function, conductance, and mean free path are calculated. It is shown that the dependence of the mean free path on the perpendicular electric field, step position fluctuation, and step height is consistent with a surface roughness scattering theory based on the disordered periodicity of the step-terrace structures. It is suggested that the proposed model could be used to simulate the surface roughness scattering due to step-terrace structures in SiC MOS inversion layers.
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
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