Affiliation:
1. MIRISE Technologies Corporation
2. Central Research Institute of Electric Power Industry (CRIEPI)
Abstract
To reduce manufacturing costs, high-quality 150 mm 4H-SiC wafers were grown at over 1.5 mm/h by high-temperature chemical vapor deposition. The dislocations in the initial growth stage did not increase compared with those in the seed crystal. The dislocation densities decreased during crystal growth, and the densities of threading dislocations and basal plane dislocations at the growth thickness of 7.1 mm were 1186 and 211 /cm2, respectively. The resolved shear stress, which is the cause of the increase in dislocations during growth, was calculated based on thermal fluid simulations; the shear stress of the grown crystal with a flat surface was small compared with that of the convex-shaped crystal. The dislocations did not increase likely because the crystals grown at high speeds were relatively flat. In addition, the decrease in dislocations was attributed to the frequent annihilation of dislocations due to the growth at a high temperature (2490 °C).
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
7 articles.
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