In situ visualization of SiC physical vapor transport crystal growth-Reference-Cited by-同舟云学术

In situ visualization of SiC physical vapor transport crystal growth

Published:2005-02 Issue:1-2 Volume:275 Page:e1807-e1812
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wellmann Peter,Herro Ziad,Winnacker Albrecht,Püsche Roland,Hundhausen Martin,Masri Pierre,Kulik Alexey,Bogdanov Maxim,Karpov Sergey,Ramm Mark,Makarov Yuri

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

2. Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer

3. Isotope Effects on the Raman Spectrum of SiC

4. Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

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