Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
2. State of the art in the modelling of SiC sublimation growth
3. In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
4. Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
5. Isotope Effects on the Raman Spectrum of SiC
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3. Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block;Crystals;2021-12-18
4. Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization;Advanced Engineering Materials;2019-09-30
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