Isotope Effects on the Raman Spectrum of SiC
Author:
Affiliation:
1. Universität Erlangen-Nürnberg
2. Friedrich-Alexander Universität Erlangen-Nürnberg
3. University of Erlangen-Nürnberg
4. Friedrich-Alexander-Universität Erlangen-Nürnberg
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.579.pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies;Materials Science Forum;2007-09
2. In situ visualization of SiC physical vapor transport crystal growth;Journal of Crystal Growth;2005-02
3. Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide;Materials Science Forum;2004-06
4. Investigation of mass transport during PVT growth of SiC by 13C labeling of source material;Journal of Crystal Growth;2003-11
5. Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization;Journal of Applied Physics;2003
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