Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization
Author:
Affiliation:
1. Crystal Growth Lab Materials Department 6 (i-meet) FAU Erlangen-Nuremberg Martensstr. 7 Erlangen D-91058 Germany
2. Development Center for X-Ray Technology (EZRT) Fraunhofer Institute for Integrated Circuits Fürth D-90768 Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.201900778
Reference27 articles.
1. Review of SiC crystal growth technology
2. In situ visualization of SiC physical vapor transport crystal growth
3. Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals
4. Thermodynamic analysis of phase transformations at the dissociative evaporation of silicon carbide polytypes
5. The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth
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