Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
Author:
Affiliation:
1. Crystal Growth Lab, Materials Department 6 (i-meet); FAU Erlangen-Nuremberg; Martensstr. 7 91058 Erlangen Germany
2. PVA Crystal Growing Systems GmbH; Im Westpark 10-12 35435 Wettenberg Germany
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201900121/fullpdf
Reference32 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. Review of SiC crystal growth technology
3. Defect reduction in sublimation grown SiC bulk crystals
4. Analysis on defect generation during the SiC bulk growth process
5. Integrated process modeling and experimental validation of silicon carbide sublimation growth
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