Integrated process modeling and experimental validation of silicon carbide sublimation growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. State of the art in the modelling of SiC sublimation growth
2. A practical model for estimating the growth rate in sublimation growth of SiC
3. Transport phenomena in sublimation growth of SiC bulk crystals
4. Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
5. Modeling of silicon carbide crystal growth by physical vapor transport method
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