Transport phenomena in sublimation growth of SiC bulk crystals-Reference-Cited by-同舟云学术

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Transport phenomena in sublimation growth of SiC bulk crystals

Published:1999-07 Issue: Volume:61-62 Page:40-43
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Segal A.S,Vorob’ev A.N,Karpov S.Yu,Makarov Yu.N,Mokhov E.N,Ramm M.G,Ramm M.S,Roenkov A.D,Vodakov Yu.A,Zhmakin A.I

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

2. Molecular and ion beam epitaxy of 3C‐SiC

3. Growth of Crystals from the Vapour;Faktor,1974

4. On the flow regimes in VPE reactors

5. Yu.V. Lapin, M.Kh. Strelets, Internal Flows of Gas Mixtures, Nauka, Moscow, 1989 (in Russian).

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1. Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC;Crystal Research and Technology;2024-05-30

2. The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology;Diamond and Related Materials;2023-06

3. Growth of AlN and GaN crystals by sublimation;Single Crystals of Electronic Materials;2019

4. Silicon carbide;Single Crystals of Electronic Materials;2019

5. Review of SiC crystal growth technology;Semiconductor Science and Technology;2018-09-05

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