Growth of AlN and GaN crystals by sublimation-Reference-Cited by-同舟云学术

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Growth of AlN and GaN crystals by sublimation

Published:2019 Issue: Volume: Page:401-445
ISSN:
Container-title:Single Crystals of Electronic Materials
language:
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Author:

Mokhov E.N.,Wolfson A.A.

Publisher

Elsevier

Reference108 articles.

1. Large-band-gap SiC, III-V-nitrides and II-VI-based semiconductor device technologies;Markoc;J. Appl. Phys.,1994

2. Aluminum nitride substrates for ultraviolet light-emitting diode structures;Chemekova;J. Surf. Investig. X-ray Synchrotron Neutron Tech.,2011

3. Bulk AlN growth by physical vapor transport;Hartmann;Semicond. Sci. Technol.,2014

4. Growth and characterization of bulk nitride by physical vapor transport;Hossain;Inside Internet,2005

5. AlN bulk crystal growth by physical vapor transport;Dalmau,2010

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