Dielectric and polar properties of aluminum nitride single crystals
Author:
Affiliation:
1. Tver State University, Department of Condensed Matter Physics, Tver, Russia
2. Institute for Problems in Mechanical Engineering of the RAS, St. Petersburg, Russia
3. Ioffe Institute, St. Petersburg, Russia
Funder
This work was supported by the Ministry of Higher Education and Scientific Research
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/00150193.2021.1888260
Reference27 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Growth of blue GaN LED structures on 150-mm Si(111)
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5. Recent Progress in Materials Issues for Piezoelectric MEMS
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