Molecular and ion beam epitaxy of 3C‐SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95227
Reference15 articles.
1. Ion beam epiplantation
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4. Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
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2. Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C–SiC heteroepitaxial growth on Si (100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
3. Epitaxial Growth, Characterization, and Properties of SiC;Electric Refractory Materials;2000-08-24
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