Optimization of thermal field of 150 mm SiC crystal growth by PVT method-Reference-Cited by-同舟云学术

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Published:2022 Issue:31 Volume:12 Page:19936-19945
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Shengtao¹^ORCID,Fan Guofeng²,Li Tie³,Zhao Lili¹

Affiliation:

1. Harbin Institute of Technology, School of Chemistry and Chemical Engineering, Heilongjiang 150001, China

2. Soft-Impact China (Harbin), Ltd, Heilongjiang 150028, China

3. Harbin KY Semiconductor, Inc, Heilongjiang 150028, China

Abstract

The effects of thermal insulation adjustment, application of seed crystals with different diameters, and shelter structure on crystal growth process were studied, and 6-inch SiC crystal with single polytype, high quality was successfully prepared.

Funder

Natural Science Foundation of Heilongjiang Province

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA02875A

Reference21 articles.

1. R.Kirschman , Status of Silicon Carbide (SiC) as a WideBandgap Semiconductor for High Temperature Applications: A Review , Wiley-IEEE Press , 2009

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

3. Enlargement Growth of Large 4H-SiC Bulk Single Crystal

4. High Quality 150 mm 4H SiC Wafers for Power Device Production

5. A review of the structure of silicon carbide

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-zone design and optimization of resistive heater for SiC single crystal growth;Journal of Materials Science;2024-05

2. Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field;Vacuum;2024-04

3. Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material;Aggregate;2024-02-23

4. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15

5. High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2;Journal of Crystal Growth;2024-01