Hot-zone design and optimization of resistive heater for SiC single crystal growth
Author:
Funder
Key R&D project of Shandong Province
Shandong Provincial Youth Innovation Science and Technology Support Program for Colleges and Universities
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-09717-y.pdf
Reference31 articles.
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2. Yang N, Song B, Wang W, Li H (2022) Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique. CrystEngComm 24:3475. https://doi.org/10.1039/D2CE00113F
3. Yan P, Xiufang C, Xiaobo H et al (2021) Research progress of semi-insulating silicon carbide single crystal substrate. J Synth Cryst 50:619. https://doi.org/10.3969/j.issn.1000-985X.2021.04.007
4. Feng X, Chen Z, Pu H (2010) Limitation in the thickness of Poly-SiC ring along the edge of 6H-SiC single crystal ingot. J Synth Cryst 39:1124. https://doi.org/10.3724/SP.J.1077.2010.01195
5. Ha M-T, Jeong S-M (2022) A review of the simulation studies on the bulk growth of silicon carbide single crystals. J Korean Ceram Soc 59:153. https://doi.org/10.1007/s43207-022-00188-y
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