Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT-Reference-Cited by-同舟云学术

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Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

Published:2000-04 Issue:1-4 Volume:211 Page:333-338
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Selder M.,Kadinski L.,Makarov Yu.,Durst F.,Wellmann P.,Straubinger T.,Hofmann D.,Karpov S.,Ramm M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. On the sublimation growth of SiC bulk crystals: development of a numerical process model

2. Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container

3. Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

4. Sublimation Growth of 50mm Diameter SiC Wafers

5. Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

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1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules;Solid State Phenomena;2024-08-27

3. The Temperature Distribution Simulation in the Graphene Sublimation Growth Zone on SiC Substrate;Technical Physics;2023-12

4. The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology;Diamond and Related Materials;2023-06

5. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06

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