Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. T. Kimoto, Material science and device physics in SiC technology for high-voltage power devices, Japanese Journal of Applied Physics 54 (2015) 040103, doi:10.7567/jjap.54.040103.
2. Fundamental research on semiconductor SiC and its applications to power electronics;Matsunami;Proceedings of the Japan Academy Series B-Physical and Biological Sciences,2020
3. Chemical vapor deposition of SiC films and its progress;Jian;Micronanoelectronic Technology,2006
4. P.G. Neudeck, J.A. Powell, D.J. Spry, A.J. Trunek, X.R. Huang, W.M. Vetter, M. Dudley, M. Skowronski, J.Q. Liu, Characterization of 3C-SiC films grown on 4H-and 6H-SiC substrate mesas during step-free surface hetero-epitaxy, in: P. Bergman, E. Janzen (Eds.) Silicon Carbide and Related Materials - 20022002, pp. 213-216.
5. Effect of nucleation on instability of step meandering during step-flow growth on vicinal 3C-SiC (0001) surfaces;Li;Journal of Crystal Growth,2017
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献