Modeling of silicon carbide crystal growth by physical vapor transport method-Reference-Cited by-同舟云学术

Modeling of silicon carbide crystal growth by physical vapor transport method

Published:2000-04 Issue:1-4 Volume:211 Page:352-359
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ma R.-H,Chen Q.-S,Zhang H,Prasad V,Balkas C.M,Yushin N.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

2. Sublimation Growth of 50mm Diameter SiC Wafers

3. On the sublimation growth of SiC bulk crystals: development of a numerical process model

4. Q.-S. Chen, H. Zhang, V. Prasad, C.M. Balkas, N.K. Yushin, A system model for silicon carbide crystal growth by physical vapor transport method, Proceedings of the 1999 National Heat Transfer Conference, Albuquerque, NHTC99-222.

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