Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with “3 separation heater method”
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference48 articles.
1. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017
2. Bulk and epitaxial growth of silicon carbide;Kimoto;Prog. Cryst. Growth Charact. Mater.,2016
3. Prospects for SiC electronics and sensors;Wright;Mater. Today,2008
4. Theoretical study on the improvement of the doping efficiency of al in 4h-SiC by co-doping group-IVB elements;Huang;Chin. Phys. B,2022
5. Two-inch a-plane (11-20) 6H-SiC crystal grown by using the pvt method from a small rectangular substrate;Yeo;J. Korean Phys. Soc.,2011
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC;Crystal Research and Technology;2024-05-30
2. Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth;Journal of Crystal Growth;2024-02
3. Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals;CrystEngComm;2024
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