Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals-Reference-Cited by-同舟云学术

Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals

Published:2024 Issue:16 Volume:26 Page:2143-2154
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lu Sheng'ou¹²^ORCID,Xu Binjie²³,Wang Yazhe⁴,Chen Hongyu¹,Hang Wei¹,Wang Rong²³^ORCID,Yuan Julong¹,Pi Xiaodong²³^ORCID,Yang Deren²³^ORCID,Han Xuefeng²³

Affiliation:

1. Ultra-precision Machining Research Center, Zhejiang University of Technology, Hangzhou, Hangzhou 310023, China

2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China

3. State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China

4. IV Semitec Co., Ltd., Hangzhou 311200, China

Abstract

The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.

Funder

Key Research and Development Program of Zhejiang Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00055B

Reference41 articles.

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