Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals-Reference-Cited by-同舟云学术

Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

Published:1996-11-01 Issue:11 Volume:143 Page:3727-3735
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pons M.¹,Blanquet E.¹,Dedulle J. M.²,Garcon I.²,Madar R.²,Bernard C.¹

Affiliation:

1. Laboratoire de Thermodynamique et Physicochimie Métallurgiques, UMR CNRS/INPG/UJF 5614—ENSEEG, Institut National Polytechnique de Grenoble, 38402 Saint Martin D'Hères, France

2. Laboratoire de Matériaux et de Génie Physique, UMR CNRS/INPG 5628—ENSPG, Institut National Polytechnique de Grenoble, 38402 Saint Martin D'Hères, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837280/pdf

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