Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
2. Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate
3. Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy
4. Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
5. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
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1. Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates;Crystal Growth & Design;2021-05-28
2. Effect of hydrogen flow on microtwins in 3C–SiC epitaxial films by laser chemical vapor deposition;Thin Solid Films;2019-05
3. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
4. Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD;Journal of the American Ceramic Society;2018-04-17
5. Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-01-04
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