Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition-Reference-Cited by-同舟云学术

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Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition

Published:2017-01-04 Issue:4 Volume:100 Page:1634-1641
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J Am Ceram Soc

Author:

Zhu Peipei¹,Xu Qingfang¹,Chen Ruyi²,Zhang Song¹,Yang Meijun¹,Tu Rong¹,Zhang Lianmeng¹,Goto Takashi³,Yan Jiasheng⁴,Li Shusen⁴

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; Wuhan China

2. International School of Material Science and Engineering; Wuhan University of Technology; Wuhan China

3. Institute for Materials Research; Tohoku University; Sendai Japan

4. Tech Semiconductors, Ltd.; Xiangyang China

Funder

National Natural Science Foundation of China

International Science & Technology Cooperation Program of China

Natural Science Foundation of Hubei Province

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.14672/fullpdf

Reference35 articles.

1. Low temperature hetero-epitaxial growth of 3C-SiC films on Si utilizing microwave plasma CVD;Zhuang;Chem Vap Deposition,2013

2. Growth of epitaxial 3C-SiC films on Si(100) via low temperature SiC buffer layer;Lien;Cryst Growth Des,2010

3. Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins;Severino;Diam Relat Mater,2009

4. Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si(001) interface;Wen;J Appl Phys,2009

5. Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates;Yun;J Cryst Growth,2007

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