Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates
2. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
3. Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
4. Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs
5. 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
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1. Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates;Crystal Growth & Design;2021-05-28
2. Effect of hydrogen flow on microtwins in 3C–SiC epitaxial films by laser chemical vapor deposition;Thin Solid Films;2019-05
3. Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD;Journal of the American Ceramic Society;2019-02-11
4. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
5. Structural study of β-SiC(001) films on Si(001) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-01-04
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