Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD-Reference-Cited by-同舟云学术

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Published:2018-04-17 Issue:9 Volume:101 Page:3850-3856
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J Am Ceram Soc

Author:

Zhu Peipei¹,Yang Meijun¹,Xu Qingfang¹,Sun Qingyun¹,Tu Rong¹,Li Jun²,Zhang Song¹^ORCID,Li Qizhong³,Zhang Lianmeng¹,Goto Takashi¹⁴,Shi Ji¹⁵,Li Haiwen¹⁶^ORCID,Ohmori Hitoshi⁷,Kosinova Marina⁸,Basu Bikramjit⁹^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan China

2. National Key Laboratory for Shock Wave and Detonation Physics Institute of Fluid Physics Mianyang China

3. Hubei Key Laboratory of Advanced Technology for Automotive Components Wuhan University of Technology Wuhan China

4. Institute for Materials Research Tohoku University Sendai Japan

5. School of Materials and Chemical Technology Tokyo Institute of Technology Tokyo Japan

6. International Research Center for Hydrogen Energy Kyushu University Fukuoka Japan

7. Institute of Physical and Chemical Research Saitama Japan

8. Nikolaev Institute of Inorganic Chemistry Russian Academy of Sciences Siberian Branch Novosibirsk Russia

9. Center for BioSystems Science & Engineering, Indian Institute of Science Bangalore Karnataka India

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/jace.15557

Reference36 articles.

1. Polarity determination and control of SiC grown on Si

2. Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

3. Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)

4. Large area buffer-free graphene on non-polar (0 0 1) cubic silicon carbide

5. Edge state in epitaxial nanographene on 3C-SiC(100)/Si(100) substrate

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