Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations-Reference-Cited by-同舟云学术

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Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

Published:2019-11 Issue:11 Volume:5 Page:e02908
ISSN:2405-8440
Container-title:Heliyon
language:en
Short-container-title:Heliyon

Author:

Alkhaldi Noura D.^ORCID,Barman Sajib K.,Huda Muhammad N.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference65 articles.

1. Effect of energy bandgap of the amorphous silicon carbide (a-Sic: H) layers on a-si multijuntion solar cells from numerical analysis;Kabir,2009

2. Silicon carbide and diamond for high temperature device applications;Willander;J. Mater. Sci. Mater. Electron.,2006

3. Silicon Carbide Microelectromechanical Systems for Harsh Environments;Cheung,2006

4. Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching;Rashid;J. Appl. Phys.,2016

5. Silicon Carbide Microsystems for Harsh Environments;Wijesundara,2011

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