Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching-Reference-Cited by-同舟云学术

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Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

Published:2016-11-21 Issue:19 Volume:120 Page:194303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rashid Marzaini¹²,Horrocks B. R.³,Healy N.¹,Goss J. P.¹,Horsfall A. B.¹

Affiliation:

1. School of Electrical and Electronic Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU, United Kingdom

2. School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia

3. School of Chemistry, Newcastle University, Newcastle Upon Tyne NE1 7RU, United Kingdom

Funder

Ministry of Higher Education, Malaysia (MOHE)

Universiti Sains Malaysia (USM)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968172

Reference84 articles.

1. Sensing the extreme

2. SiC sensors: a review

3. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

4. The structural and luminescence properties of porous silicon

5. B. R. Horrocks ,Handbook of Porous Silicon( Springer, 2014), p. 671.

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3. Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions;Micro and Nanostructures;2023-11

4. ZnO nanowire network/4H-SiC heterojunction for improved performance ultraviolet photodetector: The effect of different SiC doping concentrations on photoresponse properties;Materials Today Communications;2023-06

5. Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation;Semiconductor Physics, Quantum Electronics and Optoelectronics;2022-12-22

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