Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions-Reference-Cited by-同舟云学术

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Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions

Published:2023-11 Issue: Volume:183 Page:207657
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Zhao Siqi^ORCID,Yang Shangyu,Li Yunkai,Yan Guoguo,Zhao Wanshun,Wang Lei,Sun Guosheng,Zeng Yiping,Liu Xingfang

Funder

Special Project for Research and Development in Key areas of Guangdong Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference39 articles.

1. Comparative investigation on paralleling suitability for SiC MOSFETs and SiC/Si cascode devices;Zhao;IEEE Trans. Ind. Electron.,2022

2. Terahertz monolithic integrated cavity filter based on cyclic etched SiC via-holes;Liu;IEEE Trans. Electron. Dev.,2021

3. Radiated disturbance characteristics of SiC MOSFET module;Huang;J. Power Electron.,2021

4. Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing;Yang;Electrochim. Acta,2018

5. Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching;Kato;APEX,2020

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