First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material-Reference-Cited by-同舟云学术

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First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

Published:2024 Issue:02 Volume:14 Page:35-44
ISSN:2160-6919
Container-title:World Journal of Condensed Matter Physics
language:
Short-container-title:WJCMP

Author:

Dauda Abdullahi Alkali,Onimisi Muhammad Yusuf,Owolabi Adeyemi Joshua,Lawal Hammed Adeneyi,Gambo Hassan Muhammad,Aliyu Bashir Mohammed,Bala Surajo,Madugu Muhammad Lamido,Nainna Muhammad Abdurrahman,Bamikole Johnson Akinade

Publisher

Scientific Research Publishing, Inc.

Reference20 articles.

1. Xi, J.Q. (2017) First-Principles Study of Point Defect Behavior at Interfaces and In-Plane Strain Fields. Ph.D. Thesis, University of Tennessee, Knoxville. https://trace.tennessee.edu/utk_graddiss/4718

2. Silicon Carbide: Synthesis and Properties

3. Oxidation behaviour of nano-sized SiC particulate reinforced Alon composites

4. A Review on Si, SiGe, GaN, SiC, InP and GaAs as Enabling Technologies in EW and Space

5. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide

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