Edge state in epitaxial nanographene on 3C-SiC(100)/Si(100) substrate

Author:

Velez-Fort E.,Silly M. G.,Belkhou R.,Shukla A.,Sirotti F.,Ouerghi A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoelectrocatalytic CO2 conversion over carbon @ silicon carbide composites;Catalysis Today;2024-03

2. Modification of the Electronic Structure of Graphene Layers Grown on β-SiC(001) by Molecules of Neutral Red Dye;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-06

3. Modification of the Electronic Structure of Few-Layer Graphene Grown on β-SiC(001) by Neutral Red Dye;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2023-06-01

4. Highly Selective Photoelectroreduction of Carbon Dioxide to Ethanol over Graphene/Silicon Carbide Composites;Angewandte Chemie International Edition;2023-03-02

5. Highly Selective Photoelectroreduction of Carbon Dioxide to Ethanol over Graphene/Silicon Carbide Composites;Angewandte Chemie;2023-03-02

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