Large area buffer-free graphene on non-polar (0 0 1) cubic silicon carbide
Author:
Publisher
Elsevier BV
Subject
General Chemistry,General Materials Science
Reference21 articles.
1. STM investigation of single layer graphite structures produced on Pt(111) by hydrocarbon decomposition
2. Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
3. Large area quasi-free standing monolayer graphene on 3C-SiC(111)
4. Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)
5. Low-Energy-Electron-Diffraction and X-ray-Phototelectron-Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate
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1. Modification of the Electronic Structure of Graphene Layers Grown on β-SiC(001) by Molecules of Neutral Red Dye;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-06
2. Modification of the Electronic Structure of Few-Layer Graphene Grown on β-SiC(001) by Neutral Red Dye;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2023-06-01
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5. Nanostructured Graphene on β-SiC/Si(001): Atomic and Electronic Structures, Magnetic and Transport Properties (Brief Review);JETP Letters;2021-02
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