Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371085
Reference33 articles.
1. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films
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