Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates-Reference-Cited by-同舟云学术

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Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates

Published:2006-10 Issue:1 Volume:296 Page:11-14
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kumagai Yoshinao,Satoh Fumitaka,Togashi Rie,Murakami Hisashi,Takemoto Kikurou,Iihara Junji,Yamaguchi Koji,Koukitu Akinori

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

2. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

3. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

5. High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN;Japanese Journal of Applied Physics;2013-12-01

2. Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates;Japanese Journal of Applied Physics;2013-08-01

3. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

4. Radial space-charge-limited electron flow in semi-insulating GaN:Fe;Journal of Applied Physics;2011-07

5. Effect of Fe doping on the terahertz conductivity of GaN single crystals;Journal of Physics D: Applied Physics;2010-03-23

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