Radial space-charge-limited electron flow in semi-insulating GaN:Fe-Reference-Cited by-同舟云学术

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Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Published:2011-07 Issue:1 Volume:110 Page:013723
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mareš Jiří J.,Hubík Pavel,Krištofik Jozef,Prušáková Lucie,Uxa Štěpán,Paskova Tanya,Evans Keith

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3609071

Reference23 articles.

1. Photonic Devices

2. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

3. GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

4. Electronic Devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Point contact to single-crystalline diamond;Semiconductor Science and Technology;2012-05-11

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