Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates-Reference-Cited by-同舟云学术

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Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Published:2013-08-01 Issue:8S Volume:52 Page:08JD05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Togashi Rie,Yamamoto Sho,Karlsson K. Fredrik,Murakami Hisashi,Kumagai Yoshinao,Holtz Per-Olof,Koukitu Akinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates

2. Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

3. Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2

4. Influence of substrate polarity of (0 0 0 1) and (0 0 01¯)GaN surfaces on hydride vapor-phase epitaxy of InN

5. Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAl(Ga)N: MOCVD thermodynamics and strain distribution;Journal of Alloys and Compounds;2022-02

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