Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
3. Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LMOVPE) of Indium Nitride (InN)
4. Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2
5. High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE
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1. The synthesis and formation mechanism of nonpolar InN nanoplates;CrystEngComm;2021
2. Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal–Organic Vapor Phase Epitaxy;Nano Letters;2016-05-17
3. Low-temperature (≥400 °C) growth of InN by metalorganic vapor phase epitaxy using an NH3decomposition catalyst;Japanese Journal of Applied Physics;2016-04-18
4. Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates;Japanese Journal of Applied Physics;2013-08-01
5. Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy;physica status solidi (c);2012-12-21
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