Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
5. Hole Compensation Mechanism of P-Type GaN Films
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations;Journal of Synchrotron Radiation;2021-05-27
2. Atomic spectrometry update. Review of advances in the analysis of metals, chemicals and functional materials;J. Anal. At. Spectrom.;2014-09-26
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