High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density-Reference-Cited by-同舟云学术

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High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Published:2005-03-08 Issue:3 Volume:44 Page:1181-1185
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gogova Daniela,Larsson Henrik,Kasic Alexander,Yazdi Gholam Reza,Ivanov Ivan,Yakimova Rositza,Monemar Bo,Aujol Eric,Frayssinet Eric,Faurie Jean-Pierre,Beaumont Bernard,Gibart Pierre

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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