Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method-Reference-Cited by-同舟云学术

Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method

Published:2020-02 Issue: Volume:531 Page:125334
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mukaiyama Yuji,Sueoka Koji^ORCID,Maeda Susumu,Iizuka Masaya^ORCID,Mamedov Vasif M.

Funder

JSPS KAKENHI

Foundation for Assistance to Small Innovative Enterprises

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Vacancy and self-interstitial concentration incorporated into growing silicon crystals

2. Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited

3. Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

4. Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth

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