Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. The mechanism of swirl defects formation in silicon
2. Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited
3. A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si
4. Effect of a radiation shield on thermal stress field during Czochralski crystal growth of silicon.
5. Global simulation of the CZ silicon crystal growth up to 400mm in diameter
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4. Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal;Japanese Journal of Applied Physics;2023-07-01
5. Numerical investigation of impact of crystal diameter fluctuations on intrinsic point defects distribution in Si crystal grown by Czochralski method;Journal of Crystal Growth;2022-10
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