Effect of a radiation shield on thermal stress field during Czochralski crystal growth of silicon.
Author:
Affiliation:
1. Chemical Research Institute of Non-Aqueous Solutions, Tohoku University
2. Institute of Advanced Material Study, Kyushu University
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
http://www.jstage.jst.go.jp/article/jcej/23/2/23_2_186/_pdf
Reference14 articles.
1. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
2. Computation of stress in Bridgman crystals
3. A thermoelastic analysis of the thermal stress produced in a semi-infinite cylindrical single crystal during the Czochralski growth
4. Stresses near the solid-liquid interface during the growth of a Czochralski crystal
5. The isotropic assumption during the Czochralski growth of single semiconductors crystals
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity;Crystal Research and Technology;2024-04-09
2. The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal;Silicon;2023-11-28
3. Numerical Study on the Effect of Water-cooling Jacket Radius on Czochralski Silicon;Silicon;2023-04-01
4. Theoretical Study of Impact of Internal and External Stresses on Thermal Equilibrium Concentrations of Intrinsic Point Defects in Doped Si Crystals;ECS Journal of Solid State Science and Technology;2017
5. Thermal Stress and Dislocations in Bulk Crystal Growth;Handbook of Crystal Growth;2015
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3